By J. Alajbegovic, J. Mockor
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Extra resources for Approximation theorems in commutative algebra
BTI stress has been performed and time evolution of ΔVT is measured at different VG-STR and constant T, and different T at constant VG-STR. The magnitude of ΔVT is extracted at identical gate overdrive (VG-STR − VT0), T and tSTR, while the time exponent n, which is found to be independent of VG-STR and T for all devices, is extracted by linear regression in the tSTR range of 10 s to 1 Ks. The power-law EOX acceleration ΓE and Arrhenius T activation EA of ΔVT is extracted at ﬁxed tSTR of 1 Ks. However as mentioned before, similar ΓE and EA values would be obtained at different tSTR as the devices show similar power-law time exponent n for different stress EOX and T.
Cartier, S. Zafar, J. Bruley, A. Kerber, B. Linder, A. Callegari, Q. Yang, S. Brown, J. Stathis, J. Iacoponi, V. Paruchuri, V. 55 nm using novel interfacial layer scavenging techniques for 22 nm technology node and beyond, in Symposium on VLSI Technology: Digest of Technical Papers (2009), p. 138 Chapter 2 Characterization Methods for BTI Degradation and Associated Gate Insulator Defects Souvik Mahapatra, Nilesh Goel, Ankush Chaudhary, Kaustubh Joshi and Subhadeep Mukhopadhyay Abstract In this chapter, different characterization methods are discussed to determine BTI degradation of MOSFET parameters and to directly estimate the pre-existing and generated gate insulator defects responsible for BTI.
A. Z. S. Olsen, F. Nouri, Physical models for predicting plasma nitrided Si-O-N gate dielectric properties from physical metrology. IEEE Electron Device Lett. 24, 559 (2003) 42 S. Mahapatra et al. 61. M. J. Wang, K. 2 nm ultra thin oxide, in IEEE International Reliability Physics Symposium Proceedings (2005), p. 704 62. B. Kaczer, V. Arkbipov, R. Degraeve, N. Collaert, G. Groeseneken, M. Goodwin, Disorder-controlled-kinetics model for negative bias temperature instability and its experimental veriﬁcation, in IEEE International Reliability Physics Symposium Proceedings (2005), p.
Approximation theorems in commutative algebra by J. Alajbegovic, J. Mockor
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