Approximation theorems in commutative algebra - download pdf or read online

By J. Alajbegovic, J. Mockor

ISBN-10: 9401052042

ISBN-13: 9789401052047

ISBN-10: 9401127166

ISBN-13: 9789401127165

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BTI stress has been performed and time evolution of ΔVT is measured at different VG-STR and constant T, and different T at constant VG-STR. The magnitude of ΔVT is extracted at identical gate overdrive (VG-STR − VT0), T and tSTR, while the time exponent n, which is found to be independent of VG-STR and T for all devices, is extracted by linear regression in the tSTR range of 10 s to 1 Ks. The power-law EOX acceleration ΓE and Arrhenius T activation EA of ΔVT is extracted at fixed tSTR of 1 Ks. However as mentioned before, similar ΓE and EA values would be obtained at different tSTR as the devices show similar power-law time exponent n for different stress EOX and T.

Cartier, S. Zafar, J. Bruley, A. Kerber, B. Linder, A. Callegari, Q. Yang, S. Brown, J. Stathis, J. Iacoponi, V. Paruchuri, V. 55 nm using novel interfacial layer scavenging techniques for 22 nm technology node and beyond, in Symposium on VLSI Technology: Digest of Technical Papers (2009), p. 138 Chapter 2 Characterization Methods for BTI Degradation and Associated Gate Insulator Defects Souvik Mahapatra, Nilesh Goel, Ankush Chaudhary, Kaustubh Joshi and Subhadeep Mukhopadhyay Abstract In this chapter, different characterization methods are discussed to determine BTI degradation of MOSFET parameters and to directly estimate the pre-existing and generated gate insulator defects responsible for BTI.

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Approximation theorems in commutative algebra by J. Alajbegovic, J. Mockor

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